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Topic: EEPROM library and wear reduction (Read 412 times) previous topic - next topic


From reply #7
A split write can  program selected bits to logic zero
It was that phrase that prompted my question, not the way in which update() works, which I know is different.  If a split write counts as a write (why wouldn't it ?) then the memory address would be subject to the same 100,000 write limit as writing a whole byte.
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Mar 05, 2018, 11:05 pm Last Edit: Mar 05, 2018, 11:07 pm by J-M-L
Charging a bit or discharging means applying  a high voltage  from the charge pump - either positively or negatively

If you play with one byte, this energy from the charge pump is concentrated on that one byte which accelerated the wear. If a page write is used, that energy is dissipated over more bytes, so cell wear is decreased.

So Setting  bits to zero does create a wear but if you save setting to 1 beforehand then you have somewhat protected you're cell - that is moving from 1100.1100 to 1100.0000 could be technically done without setting all the bits to 1 in the first place... but probably the negative voltage would still be applied to bring the zero to zero as split write still assumes the erase was done sometimes before hand
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