So you're in agreement this part is ok?FET Type MOSFET N-Channel, Metal Oxide FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25° C 20A Rds On (Max) @ Id, Vgs 39 mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) @ Vgs 15nC @ 10V Input Capacitance (Ciss) @ Vds 675pF @ 25V Power - Max 36W
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