you can easily parallel two or more bjts as long as they are identical and you put a low ohmage hi pow resistor per collector (like 1ohm 1\2W in your case)
I see many board members prefer to use MoFets. Why is this?
Because FETs can switch more current and dissipate less power (not so hot) than transistors. Above 0.5 to 1A you are better off with a FET.
I found this at radioshack today IRF510.
BTW, are the radioshack components "generic" or copies of the brand name ones?
Two transistors in a darlington arrangement are considered to be in series correct?
PS: Two transistors in a darlington arrangement are considered to be in series correct?
This is not a logic level FET, it requires a gate signal of 10V to turn it on fully. You need a logic level FET, one that only requires 5V to turn it on fully.
They are real components, but packaged and priced to a ridiculous extent.
But for instance I do not see that listed anywhere on the data sheet other then as a Test condition for "Drain-Source On-State Resistance".
Where to put the load to a MOSFET? Source or Drain?Because load has resistance, which is basically a resitor. For N-channel MOSFET the reason we usually put the load at the Drain side is because of the Source is usually connected to GND. If load is connected at the source side, the Vgs will needs to be higher in order to switch the MOSFET, or there will be insufficient current flow between source and drain than expected.