Ferroelectric Random Access Memory (F-RAM) is a truly nonvolatile RAM that combines the advantages of RAM and nonvolatile memory. F-RAM is far superior to flash/EEPROM in write speed, endurance, and energy efficiency.Traditional nonvolatile memories derived from floating-gate technology use charge pumps to develop a high voltage on-chip (10 V or more) to force carriers through the gate oxide. As a result, there are long write delays, high write power, and the write operation is destructive to the memory cell. Floating-gate devices cannot support writes that exceed 106 accesses. To put this in perspective, a data recorder using EEPROM that was recording data at 1 sample/s would wear out in fewer than 12 days. In comparison, the F-RAM products offer virtually unlimited endurance (1014 accesses).The F-RAM is far superior to floating-gate devices in both write speed and power. For a typical serial EEPROM with a clock rate of 20 MHz, it would take 5 ms to write 256 bits (32-byte page buffer) and 1283.6 ms to write to the entire 64 Kb. For an equivalent F-RAM, it takes only 14 μs for 256 bits and just 3.25 ms to write to the entire 64 Kb. In addition, it requires 3900 μJ to write 64 Kb for the EEPROM, compared with 17 μJ to write 64 Kb to an F-RAM--a difference of more than 229 magnitudes.The fast write speed and low energy consumption of F-RAM makes it ideal for low-power applications, such as e-meters, wearable electronics, and battery-operated systems. To quantify the overall impact that F-RAM has on energy consumption of practical systems, this paper considers different write/read scenarios and energy consumed is compared with that of an EEPROM.
To put this in perspective, a data recorder using EEPROM that was recording data at 1 sample/s would wear out in fewer than 12 days. In comparison, the F-RAM products offer virtually unlimited endurance (1014 accesses).
I couldn't find any number at least in a "quick Google search".
I have my doubts because I have well learned that nothing is too good to be true (or at least entirely).
Perhaps this data storage method is similar to HHD (Hard Disk Drive), which has a magnetizable disk, and because FRAM is static, density and cost may be justified.
The fact that few people buy also makes production very expensive, and can even disappear from the market if it is not worth maintaining production.
There are very few and specific cases where a fast-access EEPROM is actually mandatory
The architecture, FRAM, and peripherals, combined with extensive low-power modes, are optimized to achieve extended battery life in portable and wireless sensing applications. FRAM is a nonvolatile memory technology that combines the speed, flexibility, and endurance of SRAM with the stability and reliability of flash at lower total power consumption.
I found this uC:MSP430FR2311 (ACTIVE)16 MHz Ultra-Low-Power Microcontroller - 4 KB FRAM, 1 KB SRAM, 16 IO, 8ch 10-bit ADC, OpAmp, TIA
FRAM is a nonvolatile memory technology that combines the speed, flexibility, and endurance of SRAM
Does volatile RAM (static/flip-flop-based and dynamic/capacitor-based) actually wear out? Are you serious!!!???
What causes semiconductor devices to fail? (Year of publication::1999)1. Encapsulation failure. 2. Die-attach failure. 3. Wire-bond failure. 4. Bulk-silicon defects.5. Oxide-layer faults. 6. Aluminum-metal faults.Thermal overstressElectrical overstress
Engineers and scientists have studied failures so often that they now have models, or equations, that we can use to predict when failures will occur. These models don't predict when a specific device will fail, but they can predict with reasonable certainty the rate of failure under specific conditions.
Wait... is the FRAM being used to store program code? It's a shame the little memory it has compared to the ATmega328P.
Wait again... does "Unified Memory" mean that the Program Counter can point to both FRAM and SRAM? If that's true, then this micro has an edge against many of the other ones; because this means that arbitrary code execution should be possible (e.g. to load programs on-the-fly, JIT dynamic compilers, and execute larger programs by storing chunks of code in external EEPROMs; although this last thing is only possible if there is a "page fault" interrupt).
Once I was researching the durability of a silicon chip, and at the time, years ago, were starting to dig deeper, and it was still a little inconclusive, which may mean we're using chips without an official durability, but that really must have a specific validity.
All the MSP430 parts are vonNeumann architecture chips. So all locations are directly accessible from anywhere else.