2N7000 MOSFET Switch Does Not Turn On When Gate Voltage is Applied

I would like to use a 2N7000 MOSFET as a switch. Here is a link to the datasheet:

I watched a tutorial on how to use a 2N7000 to control a 6V buzzer from this website:

I am using Electronics Workbench v5.12 to test the concept before building the circuit. I built two circuits. The first circuit uses the MOSFET as a switch, whereas the second circuit uses a SPDT switch. I used the same MOSFET switch circuit that was used in the tutorial. The switching element (MOSFET in one circuit, SPDT in the other) is connected in series between a 6V supply and a 100ohm resistor. I expect to see 60mA through the resistor when the switch is closed. I connected a 3V supply to control the gate of the MOSFET. I only get 0.006uA through the MOSFET when I apply 3V to the gate. I get the same current when I apply no voltage to the gate. I get 60mA when I close the SPDT and 0A when I open the SPDT. The attached an image with circuits to this post.

My SPDT works as expected, and since a MOSFET acts like a switch, I am pretty sure that my circuit topology is correct. Furthermore, to rule out if insufficient gate voltage was an issue, I stepped the gate voltage in steps of 10V from 10V-100V and I got 0.006uA through the resistor in each step. I also tried inserting a 1k resistor in series between the gate supply and the gate (as I have seen in some tutorials on the web) and got 0.006uA. I also tried using a 10k pulldown then a 1k pulldown resistor (since I plan to control the MOSFET from my Arduino Uno) and still got 0.006uA.

Thank you for reading this post. Any help would be greatly appreciated.

switch_closed.bmp (3.18 MB)

(deleted)

I did not tie the grounds together to a common ground. However, I assume that the simulator treats the circuit as if the grounds are tied together because everything is referenced from the same ground.

Well clearly they are not common, you see leakage current only. In a real device with
a floating gate the behaviour would be less predictable.

Thanks for your feedback, guys. I'm out the house right now but I'll tie them all together and run the sim again when I get home. Is there anything else wrong with it?

I still get leakage current (0.006uA) when I tie the grounds together (see attachment). Any more suggestions?

switch_closed2.bmp (3.02 MB)

I swapped out the 2N7000 N-Channel Enhancement MOSFET for a 2N2222 NPN BJT and a 3k resistor in series between the base and the 3V supply. The BJT switch behaves as expected. The collector-emitter current (Ice) is ~60mA when I feed 1mA into the base. This matches the current that I expect, as depicted in the circuit with the SPDT switch in place of the transistor (see attachment).

Although I can continue using the BJT in my project, I would like to learn how to use the MOSFET because I understand that, as a voltage controlled device, the MOSFET puts less drain on a battery than a BJT, which is a current-controlled device.

I appreciate all of the help that you all have provided me. I would still like to know how I can get the MOSFET to work in my simulation. Is there anything else that I should try?

bjt_switch.bmp (3.18 MB)

Hi, if the transistor model works, then the model of the MOSFET must have a parameter not set properly.

I'm not familiar with that version of the workbench, last one i use was 15 years ago.

Tom...... :slight_smile: