zoomkat:
H-bridges with MOSFETs probably can be paralleled. H-bridges with typcal NPN/PNP internals may not work well in parallel.
I'm wondering it this is actually true - secondary breakdown and current balancing is obviously a concern in linear amplifiers using BJTs, but in a switching application secondary breakdown shouldn't be an issue should it? At saturation and high-currents its the distributed resistance that contributes most to Vsat... Remember the classic secondary breakdown failure between devices is because Vbe is common to all devices.