The gs spec makes no sense for a switching application (it makes sense for a linear application).
If you look at the Vgs(th) spec, you will see conditions.
Generally, you want to drive a mosfet so that its d-s becomes "resistive" (also called "linear region", confusingly so). One of the charts will show Ids - Vds curve, by Vgs. Vertical mosfets show signs of being resistive at Vgs > 3.5 - 4v, at low Ids levels. As Ids levels go up, the required Vgs to drive the mosfet into resistive goes up as well.
If I were you, I would go back and look at the current you need to switch and see if the Vgs requirement exceeds your mcu drive levels. This assumes that you aren't switching the load too fast - in that case, gate charge + switching frequency come into play.