The 3DD13007 TRANSISTOR (NPN) is a kind of TO-220 plastic-encapsulate transistor (NPN).Here you can get some information about the features.Power dissipation (PCM) is 2 W (Tamb=25[ch8451]).Collector current(ICM) is 8 A.Collector-base voltage (V(BR)CBO) is 700 V.Operating and storage junction temperature range (TJ[ch65292]Tstg) is from -55[ch8451] to +150[ch8451].
The following is about some electrical characteristics (Tamb=25[ch8451]).The minimum collector-base breakdown voltage (V(BR)CBO) is 700 V under the condition of Ic= 1mA[ch65292]IE=0.The minimum collector-emitter breakdown voltage (V(BR)CEO) is 400 V under the condition of Ic= 10mA[ch65292]IB=0.The minimum emitter-base breakdown voltage (V(BR)EBO) is 9 V under the condition of IE= 1mA[ch65292]IC=0. The maximum collector cut-off current (ICBO) is 1 mA under the condition of VCB= 700V,IE=0. The maximum emitter cut-off current (IEBO) is 100 [ch956]A under the condition of VEB= 9 V,IC=0.The maximum collector-emitter saturation voltage (VCE(sat)) is 1 V under the condition of IC=2A,IB=0.4A.The maximum base-emitter saturation voltage (VBE(sat)) is 1.2 V under the condition of IC=2A, IB= 0.4A.The minmum transition frequency (fT) is 4 MHZ under the condition of Ic=500mA,VCE=10V and f=1MHZ.The typical collector output capacitance (Cob) is 80 pF under the condition of VCE=10,IE=0[ch65292]f=0.1MHz.The maximum fall time (tf) is 0.7 [ch956]s and the storage time (ts) is 3 [ch956]s under the condition of Vcc=125V, Ic=5A and IB1=-IB2=1A.
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