Hello I'm looking to edit this circuit to make it work with around 60V:
Now I know the transistor pair IC can withstand this voltage but the gate of the mosfet can't while being a P channel mosfet this makes it very confusion as to how to make it work with the high input voltage.
Any suggestion?
Thanks for helping.
Use a voltage divider to get about 10V VGS on the MOSFET when your input voltage is at the minimum operating voltage.
Then add a Zener diode of about 12-15V across Gate and Source. Size the Zener current for the maximim operating voltage.
It is very common to see a Zener in a MOSFET circuit that operates above 20V.
Circuit won't work for 60volt.
Limitation is the ~5volt max reverse voltage of the BE junction of a bjt transisor.
Leo..
Guess you need to drop the XY problem nonsense and tell us what you actually want to do! 
I am looking to have an Ideal diode that can withstand atleast 60V 10A to isolate a charging port of my electric skateboard when a charger is not connected for safety reasons as well as be able to play as a reverse voltage protection incase I connect another charger with a different pinout(But that is less important than the voltage isolation)
So from doing my research that "Ideal diode" is the best solution.
What do you suggest doing then?
Yes, that's probably a good solution - but couldn't tell what you were trying to do until you explained it.
If you only ask about details of your solution, we cannot determine if the solution is the right one in
the first place!
A gate-source zener is often a good idea with any MOSFET circuit as it protects the gate oxide from
overvoltage directly. The zener ideally is right close to the MOSFET to catch any induced voltage spikes in
the drive circuit wiring.
The LTC4357 might do what you want. No reverse voltage protection.
Leo..
Before deciding on the ideal diode, you must first rule out regular diodes. Will the 0.5V loss of a Schottkey diode be unbearable for your application? For a 3.7V battery and a "smart" charger the answer is probably "yes". For a 60V battery, it is probably not significant.
If you really want to eliminate the Shottkey voltage drop, consider a low-value resistor like 10 Ohm in parallel. That will reduce the diode drop to zero at zero current but at high current it is bypassed by the diode. It will increase fault current in the fingers-in-the-socket fault mode but the current is not unlimited.
I've been working on simulating an ideal diode in LTSpice. The circuit above works very well but only for low voltages. Even though you can easily get bipolar transistors with 120V rating, the minimum voltage between emitter and base is -5V for the ones I found. Since you want to drive the MOSFET on with -10V, this seems to exceed the rating of the left-hand transistor in U1. Can anyone see the flaw in my calculation? It doesn't seem right, so maybe I'm applying the datasheet incorrectly.
Another way to do it is to replace the transistor pair with an opamp configured as a comparator. Usually opamps are specified for 30V supply voltage, so you have to build a little power supply for the comparator, powered from the battery. (It takes microamps to operate a single comparator, so the power consumption is negligible.) But then the input on the left-hand side goes to -30V with respect to the comparator's supply when the charger isn't plugged in and I haven't worked out how to keep that within the comparator's specs without affecting the desired output.
Here's a circuit for an ideal diode which will handle 60V:
It modifies the basic current mirror of the paired transistors by putting a resistor R5 between them and adding diode D2 to prevent Veb going below -5V on Q1.
Diode D12 keeps the gate voltage on the main MOSFET within specifications. Use a Zener with a voltage around 12-20V.
Resistors R3 and R4 are just simulating the internal resistance of the charger and battery, so the currents don't become infinite for the simulation. They aren't part of the ideal diode circuit.
The main MOSFET should be chosen to resist the full reverse voltage (-60V VDS) and have a RDS(on) suitable for the anticipated charge current. This is a pretty demanding specification for a MOSFET: high voltage doesn't have low resistance. But it should be possible to find one.
The two transistors must be a matched pair, but the exact part numbers aren't critical. They don't see the high voltage, so you don't need any special specification.
The part numbers shown on the schematic are not intended to be recommendations. They were just the first part I found in the standard LTSpice library with the required voltage specifications.
OK thanks I'll try that.
Sorry for replying after such long time life's been a living hell.
