I am working on some reverse polarity protection for my projects.
Inspired by http://myelectrons.com/mosfet-reversed-protection/ I am trying to achieve either:
P channel protection
N channel protection
I am inclined to use the P channel solution because it will not break my ground connection. I might want to keep the option to connect my project to a breadboard for some experimenting and create a common ground. However: it is hard to find a suitable P channel mosfet. In a non-smd package they are ~6 euros, way too much. I found a D-PAK mosfet for which I can create a breakout board, but that would mean a lot more hassle. Finding suitable n channel mosfets for veroboard is no problem, at decent prices.
Question 1: is it still possible to create a common ground while using the N channel protection ? Question 2: which method would you advice ?
Thanks in advance for you knowledge and expertise,